YING, L. Z. .; HATTA, S. F. W. M. .; HUSSIN, H. . Investigation of Material and Geometric Effects on the Performance of Gate All Around Nanowire TFET and FET Devices. New Explorations in Electrical Engineering, [S. l.], v. 1, n. 1, p. 40–48, 2025. DOI: 10.22452/nece.vol1no1.4. Disponível em: https://mjlis.um.edu.my/index.php/NECE/article/view/59686. Acesso em: 5 jul. 2025.